Popular transistors.

2N2219 transistor.
Pinout. Datasheet.

Type Designator: 2N2219.
Package: TO-39, 1-collector, 2-base, 3-emitter.
Material of transistor: Si
Polarity: NPN
Total Devise power dissipation |PD|: 0.8 W(at ambient temperature ≤ + 25 )
Collector-base breakdown voltage |VCBO|: 60V
Collector-emitter breakdown voltage |VCEO|: 30V
Emitter-base breakdown voltage |VEBO|: 5V
Maximum collector current |Ic max|: 0.8A
Maximum junction temperature |Tj|: +150 C
Transition frequency (ft) : 250MHz(min.)
Emitter Capacitance |Ce|:25pF
Collector Capacitance |Cc|:8pF
Collector-emitter saturation voltage|VCE|:0,4V(IC=150mA,IB=15mA),
1,6V(IC=500mA,IB=50mA)
Base-emitter saturation voltage|VBE|:1,3V(IC=150mA,IB=15mA),
2,6V(IC=500mA,IB=50mA)
Forward current transfer ratio |hFE| : 100(IC=150mA,VCE=10V)
Turn-on time|t on |:35ns
Turn-off time |t off |:250ns
Noise Figure, (NF): 4dB