Popular transistors.

2N2222 transistor.
Pinout. Datasheet.

Type Designator: 2N2222.
Package: TO18, 1-emitter, 2-base, 3-collector.
Material of transistor: Si
Polarity: NPN
Total Devise power dissipation |PD|: 0.65W
Collector-base breakdown voltage |VCBO|: 75V
Collector-emitter breakdown voltage |VCEO|: 30V
Emitter-base breakdown voltage |VEBO|: 5V
Maximum collector current |Ic max|: 0.8A
Maximum junction temperature |Tj|: 200 C
Transition frequency (ft) : 300MHz
Emitter Capacitance |Ce|:25pF
Collector Capacitance |Cc|:8pF
Collector-emitter saturation voltage|VCE|:0,3V(IC=150mA,IB=15mA),
1V(IC=500mA,IB=50mA)
Base-emitter saturation voltage|VBE|:1,2V(IC=150mA,IB=15mA),
2V(IC=500mA,IB=50mA)
Forward current transfer ratio |hFE| : 100(IC=150mA,VCE=10V)
Turn-on time|t on |:35ns
Turn-off time |t off |:300ns
Noise Figure, (NF): 4dB

Ratings and characteristics curves.

2N2222. Saturation voltages.
VBEsat=f(Ic), VBEsat=f(Ic).
Tamb=25 C, hFE=10.

2N2222.Base-emitter saturation voltages.

2N2222.DC current gain hFE=f(Ic)
(Tamb=25 C, VCE=1V, VCE=10V).

2N2222.DC current gain.

2N2222.Permissible pulse load rthJC=f(t).

2N2222.Permissible pulse load.