Marking: 2N3906.
Package: TO-92, 1-emitter, 2-base, 3-collector.
Material of transistor: Si
Polarity: NPN
Total Devise power dissipation |PD|: 0,625 W(at ambient temperature ≤ + 25 °)
Collector-base breakdown voltage |VCBO|: 40V
Collector-emitter breakdown voltage |VCEO|: 40V
Emitter-base breakdown voltage |VEBO|: 5V
Maximum collector current-continuous |Ic max|: 0,2A
Maximum junction temperature |Tj|: 150 °C
Transition frequency (ft) : 250MHz
Input Capacitance |Cib|:10pF
Output Capacitance |Cob|:4,5pF
Collector-emitter saturation voltage|VCE|:0,25V(IC=10mA,IB=1mA),
0,4V(IC=50mA,IB=5mA)
Base-emitter saturation voltage|VBE|:0,85V(IC=10mA,IB=1mA),
0,95V(IC=50mA,IB=5mA)
Forward current transfer ratio |hFE| : 100-400(IC=10mA,VCE=1V)
Turn-on time|t on |:70ns
Turn-off- Time|t off |:260ns
Noise Figure, (NF): 4dB
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