Marking: 2N4403 .
Package: TO-92, 1-emitter, 2-base, 3-collector.
Material of transistor: Si
Polarity: PNP
Total Devise power dissipation |PD|: 0.625 W(at ambient temperature ≤ + 25 °)
Collector-base breakdown voltage |VCBO|: 40V
Collector-emitter breakdown voltage |VCEO|: 40V
Emitter-base breakdown voltage |VEBO|: 5V
Maximum collector current |Ic max|: 0.6A
Maximum junction temperature |Tj|: +150 °C
Transition frequency (ft) : 200MHz
Emitter-Base Capacitance |Ceb|:30pF
Collector-Base Capacitance |Ccb|:8,5pF
CE|:0,4V(IC=150mA,IB=15mA),
0,75V(IC=500mA,IB=50mA)
Base-emitter saturation voltage|VBE|:0,95V(IC=150mA,IB=15mA),
1,3V(IC=500mA,IB=50mA)
Forward current transfer ratio |hFE| : 100-300(IC=10mA)
Turn-on time|t on |:40ns
Turn-off time |t off |:350ns
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