Marking: 2SC1815, C1815.
Package: TO-92, 1-emitter, 2-collector, 3-base.
Material of transistor: Si
Polarity: NPN
Total Devise power dissipation |PD|: 0.4W
Collector-base breakdown voltage |VCBO|: 60V
Collector-emitter breakdown voltage |VCEO|: 50V
Emitter-base breakdown voltage |VEBO|: 5V
Maximum collector current |Ic max|: 150mA
Maximum junction temperature |Tj|: +125 °C
Transition frequency (ft) : 80MHz(min.)
Collector output Capacitance |Cob|:3,5pF
Collector-emitter saturation voltage|VCE|:0,25V(IC=100mA,IB=10mA)
Base-emitter saturation voltage|VBE|:1 V(IC=100mA,IB=10mA)
Forward current transfer ratio |hFE| :70-140(IC=2mA,VCE=6V),120-240(2SC1815Y),200-400(2SC1815GR),350-700(2SC1815BL).
Noise Figure, (NF): 10dB
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