Package: SOT23, 1-collector, 2-emitter, 3-base.
Marking: F12,F13,F14 according to range|hFE| .
Material of transistor: Si
Polarity: NPN
Total Devise power dissipation |PD|: 150mW
Collector-base breakdown voltage |VCBO|: 30V
Collector-emitter breakdown voltage |VCEO|: 20V
Emitter-base breakdown voltage |VEBO|: 4V
Maximum collector current |Ic max|: 20mA
Maximum junction temperature |Tj|: +125 °C
Transition frequency (ft) : 600MHz(typ.)
Collector output Capacitance |Cob|:1pF
Collector-emitter saturation voltage|VCE|:0,3V(IC=10mA,IB=1mA)
Forward current transfer ratio |hFE| :40-180(IC=1mA,VCE=6V),40-80(marking code F12),60-120(marking code F13),90-180(marking code F14).
Noise Figure, (NF): 3dB
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