Marking: BC307.
Package: TO-92, 1-collector, 2-base, 3-emitter.
Material of transistor: Si
Polarity: PNP
Total Devise power dissipation |PD|: 0.35 W(at ambient temperature ≤ + 25 °)
Collector-base breakdown voltage |VCBO|: 50V
Collector-emitter breakdown voltage |VCEO|: 45V
Emitter-base breakdown voltage |VEBO|: 5V
Maximum collector current |Ic max|: 0.1A
Maximum junction temperature |Tj|: +150 °C
Transition frequency (ft) : 280MHz(typ.)
Collector-emitter saturation voltage|VCE|:0,25V(IC=100mA,IB= 5mA)
Base-emitter on voltage|VBE|:1 V(IC=100mA,IB=5 mA)
Forward current transfer ratio |hFE| : 120-800,(IC=100mA,VCE=5V) 200-460(BC307B), 420-800(BC307C)
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