Package: TO-220AB, 1-gate, 2-drain, 3 - sourse, 4-drain.
Type of IRF530 transistor: MOSFET
Type of control channel: N - Channel
Maximum power dissipation (PD):79W
Maximum drain-source voltage (VDSS): 100V
Maximum gate-source voltage (VGS): ±20V
Maximum continuous drain current (ID): 17A
Maximum pulsed drain current (IDM):60A
Maximum junction temperature (Tj): 175°C
Rise Time of IRF3205 transistor (tR):22ns
Input Capacitance (Ciss):600pF
Output Capacitance (Coss):250pF
Maximum drain-source on-state resistance (RDS): 0.014 Ohm
Forward Transconductance(gfs):7,6(typ.)
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