Package:D2Pak, TO220,T0-262, 1-gate, 2-drain, 3 - sourse, 4-drain.
Type of IRF640 transistor: MOSFET
Type of control channel: N - Channel
Maximum power dissipation (PD):125W
Maximum drain-source voltage (VDSS): 200V
Maximum gate-source voltage (VGS): ±20V
Maximum continuous drain current (ID): 18A
Maximum pulsed drain current (IDM):72A
Maximum junction temperature (Tj): 175°C
Rise Time(tR):50ns
Input Capacitance (Ciss):1200pF
Output Capacitance (Coss):400pF
Maximum drain-source on-state resistance (RDS): 0.14 Ohm
Forward Transconductance(gfs):6,7(min.)
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