Marking: 13007.
Package: TO-220 1 - base, 2 - collector, 3 - emitter, 4 - collector.
Material of transistor: Si
Polarity: NPN
Total Devise power dissipation |PD|: 80 W.
Collector-base breakdown voltage |VCBO|: 850 V
Collector-emitter breakdown voltage |VCEO|: 400 V
Emitter-base breakdown voltage |VEBO|: 9 V
Maximum Continuous collector current |Ic max|: 8 A
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Maximum junction temperature |Tj|: +150 °C
Transition frequency (ft) : 4 MHz(min)
Collector-emitter saturation voltage|VCE|:1 V(IC=2A,IB=0,4A),3 V(IC=8A,IB=2A).
Base-emitter saturation voltage|VBE|:1,2 V(IC=2A,IB=0,4A),1,6 V(IC=5A,IB=1A).
Forward current transfer ratio |hFE| : 8-60.
Storage time|t s |:3 µs
Fall time |t F |:0,7 µs
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