Marking: PN2222.
Package: TO-92, 1-emitter, 2-base, 3-collector.
Material of transistor: Si
Polarity: NPN
Total Devise power dissipation |PD|: 0.625 W(at ambient temperature ≤ + 25 °)
Collector-base breakdown voltage |VCBO|: 60V
Collector-emitter breakdown voltage |VCEO|: 30V
Emitter-base breakdown voltage |VEBO|: 5V
Maximum collector current |Ic max|: 0.6A
Maximum junction temperature |Tj|: 150°C
Transition frequency (ft) : 250MHz
Input Capacitance |Cibo|:30pF
Output Capacitance |Cobo|:8pF
Collector-emitter saturation voltage|VCE|:0,4V(IC=150mA,IB=15mA),
1,6V(IC=500mA,IB=50mA)
Base-emitter saturation voltage|VBE|:1,3V(IC=150mA,IB=15mA),
2,6 V(IC=500mA,IB=50mA)
Forward current transfer ratio |hFE| : 100-300(IC=150mA,VCE=10V)
Noise Figure, (NF): 4dB
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