Marking: 2N3703.
Package: TO-92, 1-base, 2-collector, 3-emitter.
Material of transistor: Si
Polarity: NPN
Total Devise power dissipation |PD|: 0,625W
Collector-base breakdown voltage |VCBO|: 50V
Collector-emitter breakdown voltage |VCEO|: 30V
Emitter-base breakdown voltage |VEBO|: 5V
Maximum collector current |Ic max|: 0,5A
Maximum junction temperature |Tj|: +150 °C
Transition frequency (ft) : 100MHz
Output Capacitance |Cob|:12pF
Collector-emitter saturation voltage|VCE|:0,25V(IC=50mA,IB=5mA)
Forward current transfer ratio |hFE| : 30-150(IC= 50mA,VCE=5V)
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