Marking: 2N3773.
Package: TO-3, 1-emitter, 2-base, 3-collector.
Material of transistor: Si
Polarity: NPN
Total Devise power dissipation |PD|: 150W
Collector-base breakdown voltage |VCBO|: 160V
Collector-emitter breakdown voltage |VCEO|: 140V
Emitter-base breakdown voltage |VEBO|: 7V
Maximum collector current |Ic max|: 16A
Maximum junction temperature |Tj|: +150 °C
Transition frequency (ft) : 0,2MHz
Collector-emitter saturation voltage|VCE|:1,4V(IC=8A,IB=800mA),4V(IC=16A,IB=3,2A)
Forward current transfer ratio |hFE| :15 - 60(IC=8A)
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