Marking: 2N3866.
Package: TO-39, 1-collector, 2-base, 3-emitter.
Material of transistor: Si
Polarity: NPN
Total Devise power dissipation |PD|: 3,5 W(at ambient temperature ≤ + 25 °)
Collector-base breakdown voltage |VCBO|: 55V
Collector-emitter breakdown voltage |VCEO|: 30V
Emitter-base breakdown voltage |VEBO|: 3,5V
Maximum collector current |Ic max|: 0.4A
Maximum junction temperature |Tj|: +200 °C
Transition frequency (ft) : 500MHz
Collector Capacitance |Cc|:3pF
Collector-emitter saturation voltage|VCE|:1V(IC=100mA,IB=20mA)
Forward current transfer ratio |hFE| :10-200(IC=50mA,VCE=5V)
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