Marking: 2N5088.
Package: TO-92, 1-emitter, 2-base, 3-collector.
Material of transistor: Si
Polarity: NPN
Total Devise power dissipation |PD|: 0.625W(at ambient temperature ≤ + 25 °)
Collector-base breakdown voltage |VCBO|: 35V
Collector-emitter breakdown voltage |VCEO|: 30V
Emitter-base breakdown voltage |VEBO|: 5V
Maximum collector current |Ic max|: 0.05A
Maximum junction temperature |Tj|: +150 °C
Transition frequency (ft) : 50MHz(min)
Emitter Capacitance |Ce|:12pF
Collector Capacitance |Cc|:4pF
Collector-emitter saturation voltage|VCE|:0,5V(IC=10mA,IB=1mA)
Base-emitter saturation voltage|VBE|:0,8V(IC=10mA,IB=1mA)
Forward current transfer ratio |hFE| : 350 - 1400(IC=1mA,VCE=5V)
Noise Figure, (NF): 3dB
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