Marking: 2N5401.
Package: TO-92, 1-emitter, 2-base, 3-collector.
Material of transistor: Si
Polarity: PNP
Total Devise power dissipation |PD|: 0.625W
Collector-base breakdown voltage |VCBO|: 160V
Collector-emitter breakdown voltage |VCEO|: 150V
Emitter-base breakdown voltage |VEBO|: 5V
Maximum collector current |Ic max|: 0.3A
Maximum junction temperature |Tj|: +150 °C
Transition frequency (ft) : 300MHz
Collector Capacitance |Cc|:6pF
Collector-emitter saturation voltage|VCE|:0,2V(IC=10mA,IB=1mA),
0,5V(IC=50mA,IB=5mA)
Base-emitter saturation voltage|VBE|:1V(IC=10mA,IB=1mA),
1V(IC=50mA,IB=5mA)
Forward current transfer ratio |hFE| : 60-240(IC=10mA,VCE=5V)
Noise Figure, (NF): 8dB
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