Package: SOT523
Marking code:72, 702..
Type of 2N7002T transistor: MOSFET
Type of control channel: N - Channel
Maximum power dissipation (PD): 150mW
Maximum drain-source voltage (VDSS): 60V
Maximum drain-gate voltage (VDGR): 60V
Maximum gate-source voltage Continuous (VGS): ±20V
Maximum gate-source voltage Pulsed (VGS): ±40V
Maximum continuous drain current (ID):115mA
Maximum pulsed drain current (IDM):800 mA
On-state drain current(ID(ON)):0,5 - 1 A
Maximum junction temperature (Tj): 150°C
Rise Time (tR):7 - 20ns
Input Capacitance (Ciss):22-50 pF
Output Capacitance (Coss):11-25 pF
Maximum drain-source on-state resistance (RDS): 2 - 7.5 Ohm
Forward Transconductance(gfs):80
2N7002T Datasheet (PDF) 
|
