Marking: 2SC945.
Package: TO-92, 1-emitter, 2-collector, 3-base.
Material of transistor: Si
Polarity: NPN
Total Devise power dissipation |PD|: 0.25W
Collector-base breakdown voltage |VCBO|: 60V
Collector-emitter breakdown voltage |VCEO|: 50V
Emitter-base breakdown voltage |VEBO|: 5V
Maximum collector current |Ic max|: 0.1A
Maximum junction temperature |Tj|: +125 °C
Transition frequency (ft) : 250MHz(typ.)
Emitter Capacitance |Ce|: 5pF
Collector Capacitance |Cc|:3pF
Collector-emitter saturation voltage|VCE|:0,15V(IC=100mA,IB=10mA)
Base-emitter saturation voltage|VBE|:0,86 V(IC=100mA,IB=10mA)
Forward current transfer ratio |hFE| :90-600(IC=1mA,VCE=6V),90-180(2SC945R),135-270(2SC945Q),200-400(2SC945P),300-600(2SC945K).
Noise Figure, (NF): 15dB
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