Marking: BC109C.
Package: TO-18, 1-emitter, 2-base, 3-collector.
Material of transistor: Si
Polarity: NPN
Total Devise power dissipation |PD|: 0.3W(at ambient temperature ≤ + 25 °)
Collector-base breakdown voltage |VCBO|: 30V
Collector-emitter breakdown voltage |VCEO|: 20V
Emitter-base breakdown voltage |VEBO|: 5V
Maximum collector current |Ic max|: 0.1A
Maximum junction temperature |Tj|: +175 °C
Transition frequency (ft) : 100MHz(min)
Emitter Capacitance |Ce|:9pF
Collector Capacitance|Cc|:6pF
Collector-emitter saturation voltage|VCE|:90mV(IC=10mA,IB=0,5mA),
0,2V(IC=100mA,IB= 5mA).
Base-emitter saturation voltage|VBE|:0,7V(IC=10mA,IB=0,5mA),
0,9V(IC=100mA,IB= 5mA)
Forward current transfer ratio |hFE| : 420-800(IC=2mA,VCE=5V) .
Noise Figure, (NF): 4dB
BC109 Datasheet (PDF) 
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