Marking: BC182L.
Package: TO-92B, 1-emitter, 2-collector, 3-base.
Material of transistor: Si
Polarity: NPN
Total Devise power dissipation |PD|: 0.3 W(at ambient temperature + 25 °)
Collector-base breakdown voltage |VCBO|: 60V
Collector-emitter breakdown voltage |VCEO|: 50V
Emitter-base breakdown voltage |VEBO|: 6V
Maximum collector current |Ic max|: 0.1A
Maximum junction temperature |Tj|: +125 °C
Transition frequency (ft) : 150MHz(min.),220MHz(typ.)
Collector-Base Capacitance|Ccbo|:5pF(max.)
Collector-emitter saturation voltage|VCE|:0,25V(IC=10 mA,IB= 0,5mA)
Base-emitter saturation voltage|VBE|:1,2V(IC=100mA,IB= 5mA)
Forward current transfer ratio |hFE| : 110-800(IC=2mA,VCE=5V), 125-260(BC182LA), 240-500(BC182LB), 450-900(BC182LC).
Noise Figure, (NF): 10dB(max.)
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