Marking: BC212L.
Package: TO-92, 1-emitter, 2-collector, 3-base.
Material of transistor: Si
Polarity: PNP
Total Devise power dissipation |PD|: 0.625 W(at ambient temperature + 25 °)
Collector-base breakdown voltage |VCBO|: 60V
Collector-emitter breakdown voltage |VCEO|: 50V
Emitter-base breakdown voltage |VEBO|: 5V
Maximum collector current |Ic max|: 0.3A
Maximum junction temperature |Tj|: +150 °C
Transition frequency (ft) : 200MHz(min.),300MHz(typ.)
Output Capacitance|C ob|:5pF(max.)
Collector-emitter saturation voltage|VCE|:0,6V(IC=100 mA,IB= 5mA)
Base-emitter saturation voltage|VBE|:1,1V(IC=100mA,IB= 5mA)
Forward current transfer ratio |hFE| : 60-600(IC=2mA,VCE=5V).
Noise Figure, (NF): 10dB(max.)
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