Marking: BC337.
Package: TO-92, 1-collector, 2-base, 3-emitter.
Material of transistor: Si
Polarity: NPN
Total Devise power dissipation |PD|: 0.625W(at ambient temperature ≤ + 25 °)
Collector-base breakdown voltage |VCBO|: 50V
Collector-emitter breakdown voltage |VCEO|: 45V
Emitter-base breakdown voltage |VEBO|: 5V
Maximum collector current |Ic max|: 0.8A
Maximum junction temperature |Tj|: +150 °C
Transition frequency (ft) : 200MHz(typ.)
Output Capacitance |Cobo|:5pF
Input Capacitance|Cibo|:60pF
Collector-emitter saturation voltage|VCE|:0,7V(IC=500mA,IB=50mA),
0,65V(IC=100mA,IB=5mA)
Base-emitter on voltage|VBE|:1,2V(IC=500mA,IB=50mA),
0,93V(IC=100mA,IB=5mA)
Forward current transfer ratio |hFE| : 100-630,(IC=100mA,VCE=1V), 100-250(BC337/16), 160-400(BC337/25), 250-630(BC337/40)
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