Marking: BC639.
Package: TO-92, 1-emitter, 2-collector, 3-base.
Material of transistor: Si
Polarity: NPN
Total Devise power dissipation |PD|: 0.83W
Collector-base breakdown voltage |VCBO|: 100V
Collector-emitter breakdown voltage |VCEO|: 80 V
Emitter-base breakdown voltage |VEBO|: 5V
Maximum collector current |Ic max|: 1A
Maximum junction temperature |Tj|: 200 °C
Transition frequency (ft) : 100MHz(min.)
Input Capacitance |Cib|:50pF
Output Capacitance |Cob|:7pF
Collector-emitter saturation voltage|VCE|:0,5V(IC=500mA,IB=50mA)
Forward current transfer ratio |hFE| : 63-250(IC=150mA,VCE=2V)
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