Marking: 6C with an additional letter, or dash sign, denoting the manufacturer.
For example - 6Cp and 6C-(made in Hong Kong),
6Ct(made in Malaysia),6CW(made in China).
Package: SOT-23, 1-collector, 2-emitter, 3-base.
Material of transistor: Si
Polarity: NPN
Total Devise power dissipation |PD|: 0.250 W(at ambient temperature ≤ + 25 °)
Collector-base breakdown voltage |VCBO|: 50V
Collector-emitter breakdown voltage |VCEO|: 45V
Emitter-base breakdown voltage |VEBO|: 5V
Maximum collector current |Ic max|: 0.5A
Maximum junction temperature |Tj|: +150 °C
Transition frequency (ft) : 100MHz(min)
Collector Capacitance|Cc|:3pF(max.)
Collector-emitter saturation voltage|VCE|:700mV(IC=500mA,IB= 50mA)
Base-emitter saturation voltage|VBE|:1,2V(IC=500mA)
Forward current transfer ratio |hFE| : 250-600
BC817 Datasheet (PDF) 
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