Marking:1D with an additional letter, or dash sign, denoting the manufacturer.For example - 1Dp and1D- (made in Hong Kong),
1Dt(made in Malaysia),1DW(made in China)
Package: SOT-23, 1-collector, 2-emitter, 3-base.
Material of transistor: Si
Polarity: NPN
Total Devise power dissipation |PD|: 0.250 W(at ambient temperature ≤ + 25 °)
Collector-base breakdown voltage |VCBO|: 80V
Collector-emitter breakdown voltage |VCEO|: 65V
Emitter-base breakdown voltage |VEBO|: 6V
Maximum collector current |Ic max|: 0.1A
Maximum junction temperature |Tj|: +150 °C
Transition frequency (ft) : 100MHz(min)
Collector Capacitance|Cc|:3pF(max.)
Collector-emitter saturation voltage|VCE|:200mV(IC=100mA,IB= 5mA)
Base-emitter saturation voltage|VBE|:900mV(IC=100mA,IB=5mA)
Forward current transfer ratio |hFE| : 110-450,(IC= 2mA,VCE=5V),
BC846 Datasheet (PDF)
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