Marking: 3A with an additional letter, or dash sign, denoting the manufacturer.For example - 3Ap and 3A-(made in Hong Kong),
3At(made in Malaysia).
Package: SOT-23, 1-collector, 2-emitter, 3-base.
Material of transistor: Si
Polarity: PNP
Total Devise power dissipation |PD|: 0.250 W(at ambient temperature ≤ + 25 °)
Collector-base breakdown voltage |VCBO|: 80V
Collector-emitter breakdown voltage |VCEO|: 65V
Emitter-base breakdown voltage |VEBO|: 5V
Maximum collector current |Ic max|: 0.1A
Maximum junction temperature |Tj|: +150 °C
Transition frequency (ft) : 100MHz(min)
Collector-outpute Capacitance|Cob|:4,5pF(max.)
Collector-emitter saturation voltage|VCE|:650mV(IC=100mA,IB= 5mA)
Base-emitter saturation voltage|VBE|:850mV(IC=100mA,IB=5mA)
Forward current transfer ratio |hFE| : 125-250,(IC= 2mA,VCE=5V),
BC856A Datasheet (PDF) 
Table for identifying the type of SMD devices.
|
