Popular transistors.

BC856B transistor.
Pinout. Datasheet.

Marking: 3B with an additional letter, or dash sign, denoting the manufacturer.For example - 3Bp and3B-(made in Hong Kong), 3Bt(made in Malaysia).
Package: SOT-23, 1-collector, 2-emitter, 3-base.
Material of transistor: Si
Polarity: PNP
Total Devise power dissipation |PD|: 0.250 W(at ambient temperature ≤ + 25 )
Collector-base breakdown voltage |VCBO|: 80V
Collector-emitter breakdown voltage |VCEO|: 65V
Emitter-base breakdown voltage |VEBO|: 5V
Maximum collector current |Ic max|: 0.1A
Maximum junction temperature |Tj|: +150 C
Transition frequency (ft) : 100MHz(min)
Collector-outpute Capacitance|Cob|:4,5pF(max.)
Collector-emitter saturation voltage|VCE|:650mV(IC=100mA,IB= 5mA)
Base-emitter saturation voltage|VBE|:850mV(IC=100mA,IB=5mA)
Forward current transfer ratio |hFE| : 220-450,(IC= 2mA,VCE=5V),

BC856B Datasheet (PDF)