Popular transistors.

BUZ11

Package: TO220,T0-220FP, 1-gate, 2-drain, 3 - sourse, 4-drain.
Type of BUZ11 transistor: MOSFET
Type of control channel: N - Channel
Maximum power dissipation (PD):120W(TO220),35W(TO220FR)
Maximum drain-source voltage (VDSS): 50V
Maximum gate-source voltage (VGS): ±20V
Maximum continuous drain current (ID): 36A(TO220),20A(TO220FR)
Maximum pulsed drain current (IDM):144A
Maximum junction temperature (Tj): 150°C
Rise Time(tR):75ns
Input Capacitance (Ciss):2000pF
Output Capacitance (Coss):800pF
Maximum drain-source on-state resistance (RDS): 0.04 Ohm
Forward Transconductance(gfs):10