Package: TO220AB 1-gate, 2-drain, 3 - sourse, 4-drain.
Type of BUZ90 transistor: MOSFET
Type of control channel: N - Channel
Maximum power dissipation (PD):75W
Maximum drain-source voltage (VDSS): 600V
Maximum gate-source voltage (VGS): ±20V
Maximum continuous drain current (ID): 4,5A
Maximum pulsed drain current (IDM):18A
Maximum junction temperature (Tj): 150°C
Rise Time(tR):75ns
Input Capacitance (Ciss):1050pF
Output Capacitance (Coss):170pF
Maximum drain-source on-state resistance (RDS): 1,6 Ohm
Forward Transconductance(gfs):3,8
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