Marking: KTC9013, C9013 .
Package: TO-92, 1-emitter, 2-base, 3-collector.
Material of transistor: Si
Polarity: NPN
Total Devise power dissipation |PD|: 625 mW(at ambient temperature ≤ + 25 °)
Collector-base breakdown voltage |VCBO|: 40V
Collector-emitter breakdown voltage |VCEO|: 30V
Emitter-base breakdown voltage |VEBO|: 5V
Maximum collector current |Ic max|: 0.5A
Maximum junction temperature |Tj|: +150 °C
Transition frequency (ft) : 140MHz(min.)
Output Capacitance |Cob|:7pF
Collector-emitter saturation voltage|VCE|:0,25V(IC=100mA,IB= 5mA).
Forward current transfer ratio |hFE| : 64-246,(IC=50mA,VCE=1V), 64-91(C9013D), 78-112(C9013E), 96-135(C9013F), 118-166(C9013G), 144-202(C9013H), 176-246(C9013I).
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