Marking: KTC9014, C9014 .
Package: TO-92, 1-emitter, 2-base, 3-collector.
Material of transistor: Si
Polarity: NPN
Total Devise power dissipation |PD|: 625 mW(at ambient temperature ≤ + 25 °)
Collector-base breakdown voltage |VCBO|: 60V
Collector-emitter breakdown voltage |VCEO|: 50V
Emitter-base breakdown voltage |VEBO|: 5V
Maximum collector current |Ic max|: 150mA
Maximum junction temperature |Tj|: +150 °C
Transition frequency (ft) : 60MHz(min.)
Output Capacitance |Cob|:3,5pF
Collector-emitter saturation voltage|VCE|:0,25V(IC=100mA,IB= 5mA).
Forward current transfer ratio |hFE| : 60-1000,(IC=1mA,VCE=5V), 60-150(C9014A), 100-300(C9014B), 200-600(C9014C), 400-1000(C9014D).
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