Package: TO-3, 1- sourse, 2-gate, 3 - drain.
Type of IRF150 transistor: MOSFET
Type of control channel: N - Channel
Maximum power dissipation (PD):150W
Maximum drain-source voltage (VDSS): 100V
Maximum gate-source voltage (VGS): ±20V
Maximum continuous drain current (ID): 40A
Maximum pulsed drain current (IDM): 60A
Maximum junction temperature (Tj): 150°C
Rise Time of IRF3205 transistor (tR):100ns
Input Capacitance (Ciss):2900pF
Output Capacitance (Coss):1050pF
Maximum drain-source on-state resistance (RDS): 0.055 Ohm
Forward Transconductance(gfs):12,3
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