Package: TO-220AB, 1-gate, 2-drain, 3 - sourse, 4-drain.
Type of IRF2807 transistor: MOSFET
Type of control channel: N - Channel
Maximum power dissipation (PD): 230W
Maximum drain-source voltage (VDSS): 75V
Maximum gate-source voltage (VGS): ±20V
Maximum continuous drain current (ID):82A
Maximum pulsed drain current (IDM):280A
Maximum junction temperature (Tj): 175°C
Rise Time (tR):64ns
Input Capacitance (Ciss):3820 pF
Output Capacitance (Coss):610pF
Maximum drain-source on-state resistance (RDS): 0.013 Ohm
Forward Transconductance(gfs):38
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