Package: TO-220AB, 1-gate, 2-drain, 3 - sourse, 4-drain.
Type of IRF3710 transistor: MOSFET
Type of control channel: N - Channel
Maximum power dissipation (PD): 200W
Maximum drain-source voltage (VDSS): 100V
Maximum gate-source voltage (VGS): ±20V
Maximum continuous drain current (ID):57A
Maximum pulsed drain current (IDM):230A
Maximum junction temperature (Tj): 175°C
Rise Time(tR):58ns
Input Capacitance (Ciss):3130 pF
Output Capacitance (Coss):410pF
Maximum drain-source on-state resistance (RDS): 0.023 Ohm
Forward Transconductance(gfs):32
|
