Popular transistors.

IRF510 MOSFET transistor.
Pinout. Datasheet.

Package: TO-220AB, 1-gate, 2-drain, 3 - sourse, 4-drain.
Type of IRF510 transistor: MOSFET
Type of control channel: N - Channel
Maximum power dissipation (PD):43W
Maximum drain-source voltage (VDSS): 100V
Maximum gate-source voltage (VGS): ±20V
Maximum continuous drain current (ID): 5,6A
Maximum pulsed drain current (IDM):20A
Maximum junction temperature (Tj): 175C
Rise Time of IRF3205 transistor (tR):25ns
Input Capacitance (Ciss):135pF
Output Capacitance (Coss):80pF
Maximum drain-source on-state resistance (RDS): 0.54 Ohm
Forward Transconductance(gfs):2