Package: TO-220AB, 1-gate, 2-drain, 3 - sourse, 4-drain.
Type of IRF520 transistor: MOSFET
Type of control channel: N - Channel
Maximum power dissipation (PD):60W
Maximum drain-source voltage (VDS): 100V
Maximum gate-source voltage (VGS): ±20V
Maximum continuous drain current (ID): 9,2A
Maximum pulsed drain current (IDM):37A
Maximum junction temperature (Tj): 175°C
Rise Time of IRF3205 transistor (tR):30ns
Input Capacitance (Ciss):350pF
Output Capacitance (Coss):130pF
Maximum drain-source on-state resistance (RDS(on)): 0.25 Ohm
Forward Transconductance(gfs):2,7(min.)-4,5(typ.)
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