Package: TO-220, 1-gate, 2-drain, 3 - sourse, 4-drain.
Type of IRF540N transistor: MOSFET
Type of control channel: N - Channel
Maximum power dissipation (PD):130W
Maximum drain-source voltage (VDSS): 100V
Maximum gate-source voltage (VGS): ±20V
Maximum continuous drain current (ID): 33A
Maximum pulsed drain current (IDM):110A
Maximum junction temperature (Tj): 175°C
Rise Time(tR):35nS
Input Capacitance (Ciss):1960pF
Output Capacitance (Coss):250pF
Maximum drain-source on-state resistance (RDS): 0.040 Ohm
Forward Transconductance(gfs):21(min.)
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