Package: TO-220AB, 1-gate, 2-drain, 3 - sourse, 4-drain.
Type of IRF730 transistor: MOSFET
Type of control channel: N - Channel
Maximum power dissipation (PD):74W
Maximum drain-source voltage (VDSS): 400V
Maximum gate-source voltage (VGS): ±20V
Maximum continuous drain current (ID): 5,5A
Maximum pulsed drain current (IDM):22A
Maximum junction temperature (Tj): 125°C
Rise Time(tR):33ns
Input Capacitance (Ciss):620pF
Output Capacitance (Coss):108pF
Maximum drain-source on-state resistance (RDS):1 Ohm
Forward Transconductance(gfs):2,7(min.)
|