Popular transistors.

IRF830 MOSFET transistor.
Pinout. Datasheet.

Package: TO-220AB, 1-gate, 2-drain, 3 - sourse, 4-drain.
Type of IRF830 transistor: MOSFET
Type of control channel: N - Channel
Maximum power dissipation (PD):100W
Maximum drain-source voltage (VDSS): 500V
Maximum gate-source voltage (VGS): ±20V
Maximum continuous drain current (ID): 4,5A
Maximum pulsed drain current (IDM):18A
Maximum junction temperature (Tj): 150C
Rise Time(tR):33ns
Input Capacitance (Ciss):610pF
Output Capacitance (Coss):96pF
Maximum drain-source on-state resistance (RDS): 1,5 Ohm
Forward Transconductance(gfs):2,5(min.)