Package: TO-247, 1-gate, 2-drain, 3 - sourse.
Type of IRFP250 transistor: MOSFET
Type of control channel: N - Channel
Maximum power dissipation (PD):190W
Maximum drain-source voltage (VDSS): 200V
Maximum gate-source voltage (VGS): ±20V
Maximum continuous drain current (ID):30A
Maximum pulsed drain current (IDM):120A
Maximum junction temperature (Tj): 150°C
Rise Time(tR):86ns
Input Capacitance (Ciss):2800 pF
Output Capacitance (Coss):780 pF
Maximum drain-source on-state resistance (RDS): 0.085 Ohm
Forward Transconductance(gfs):12
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