Package: TO-220AB, 1-gate, 2-drain, 3 - sourse, 4-drain.
Type of IRFZ34N transistor: MOSFET
Type of control channel: N - Channel
Maximum power dissipation (PD): 56W
Maximum drain-source voltage (VDSS): 55V
Maximum gate-source voltage (VGS): ±20V
Maximum continuous drain current (ID):26A
Maximum pulsed drain current (IDM):100A
Maximum junction temperature (Tj): 175°C
Rise Time(tR):49ns
Input Capacitance (Ciss):700 pF
Output Capacitance (Coss):240 pF
Maximum drain-source on-state resistance (RDS): 0.04 Ohm
Forward Transconductance(gfs):6,5
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