Popular transistors.

Marking:KSE13001, 13001.
KSE13001 are used mainly in devices for powering and recharging various electronic gadgets.
Package: TO-92, 1-base, 2-collector, 3-emitter.
Material of transistors: Si
Polarity: NPN

The main parameters of the KSE13001 .

Power Dissipation (P_D)at an ambient temperature of 25°, without heat sink.(|T_A|=25°)
0.6 W for package TO-92

Collector-base breakdown voltage |V_CBO|: 400V

Collector-emitter breakdown voltage |V_CEO|: 400V

Emitter-base breakdown voltage |V_EBO|: 7V

Maximum collector current |I_{c max}|: 0.1A

Maximum junction temperature |T_j|: +150 °C

Transition frequency (f_t) : 50MHz(min)

Collector-emitter saturation voltage|V_CE|:0,5V(IC=50mA,I_B=10mA).

Base-emitter saturation voltage|V_BE|:1,2V(IC=50mA,I_B=10mA).

Forward current transfer ratio |h_FE| : 10-70,(I_C=20mA,V_CE=20V).

Storage time|t _s |:1,5µs

Fall time |t _F |:0,3µs

KSE13001 Datasheet (PDF)
(Fairchild Semiconductor.)