Popular transistors.

MJE13003 and 13003 transistors.

MJE13003 and 13003 transistors. Pinout.

Marking: 13003,MJE13003.
Package: TO-252, TO-220, T0-251, TO-126, TO-92, TO-92L.

Attention! MJE13003 in packages TO-92 and TO-126 can have a different pin arrangement (not as in the first image)!

For example:
MJE13003 and 13003 transistors. Another option Pinout.
Therefore, the pins of each 13003 must be checked with a multimeter or tester before installation.

If the transistor is faulty in such a way that the location of its pins can't be specified by the multimeter or tester, you need to pay attention to its connection to the electronic circuit of the device in which it is used.
The emitter is most often connected directly or through a resistor with a small resistance to the negative pin of the input smoothing capacitor.
The collector is always in the middle.
Thus, the third pin is the base.

Some 13003 contain built-in diodes connected between the emitter and the collector. Their purpose is to protect the transistor from reverse voltage pulses that occur when it operates with an inductive load-usually the transformer winding.
13003 transistor with the diode between the collector and emitter.

The main parameters of the 13003(MJE13003).

Material of transistor: Si
Polarity: NPN
Power Dissipation (PD)at an ambient temperature of 25°, without heat sink.(|TA|=25°)
1.1 W (TO-92 and TO-92L).
TO-220 - 2 W.
TO-252 and TO-251 - 1,56 W.
TO-126 - 1,4 W.

Power Dissipation (PD)at a collector temperature not exceeding 25° supported by a heat sink.(|Tc|=25°
TO-126 - 20 W.
TO-220 - 50 W.
TO-252 and TO-251 - 25 W.

Collector-base breakdown voltage |VCBO|: 700 V.

Collector-emitter breakdown voltage |VCEO|: 400 V.

Emitter-base breakdown voltage |VEBO|: 7 V.

Maximum Continuous collector current |Ic max|: 1,5 A

. Maximum junction temperature |Tj|: +150 C

. Transition frequency (ft) : 10 MHz(min).

Collector-emitter saturation voltage|VCE|:1 V(IC=1A,IB=0,25A),3 V(IC=1,5A,IB=0,5A).

Base-emitter saturation voltage|VBE|:1 V(IC=0,5A,IB=0,1A),1,2 V(IC=1A,IB=0,25A).

Forward current transfer ratio |hFE| : 14-57.

Storage time|t s |:1 µs.

Fall time |t F |:0,7 µs.

MJE13003 Datasheet (PDF)
(Unisonic Technologies.)

Table for identifying the type of SMD devices.