Marking code: 1B
Package: SOT-23, 1-collector, 2-emitter, 3-base.
Material of transistor: Si
Polarity: NPN
Total Devise power dissipation |PD|: 0.35 Watt
Collector-base breakdown voltage |VCBO|: 60V
Collector-emitter breakdown voltage |VCEO|: 30V
Emitter-base breakdown voltage |VEBO|: 5V
Maximum collector current |Ic max|: 0.6A
Maximum junction temperature |Tj|: +150 °C
Transition frequency (ft) : 250MHz(min)
Collector Capacitance|Cc|:8pF(max.)
Collector-emitter saturation voltage|VCE|:0,4V(IC=150mA,IB=15mA)
Base-emitter saturation voltage|VBE|:1,3V(IC=150mA,IB=15mA)
Forward current transfer ratio |hFE| : 100-300,(IC=150mA,VCE=10V),
MMBT2222 Datasheet (PDF)
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