Marking code: 2L or 4MB
Package: SOT-23, 1-collector, 2-emitter, 3-base.
Material of transistor: Si
Polarity: PNP
Total Devise power dissipation |PD|: 0.35 Watt
Collector-base breakdown voltage |VCBO|: -160V
Collector-emitter breakdown voltage |VCEO|: -160V
Emitter-base breakdown voltage |VEBO|: -5V
Maximum collector current |Ic max|: 0.6A
Maximum junction temperature |Tj|: +150 °C
Transition frequency (ft) : 100-300MHz
Collector Capacitance|Cc|:6pF(max.)
Collector-emitter saturation voltage|VCE|:0,5V(IC= 50mA,IB=5mA)
Base-emitter saturation voltage|VBE|:1 V(IC=50mA,IB=5mA)
Forward current transfer ratio |hFE| : 40-280,(IC=1mA,VCE=10V),
MMBT5401 Datasheet (PDF) 
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