Marking: TIP3055.
Package: TO-218, 1-base, 2-collector, 3-emitter.
Material of transistor: Si
Polarity: NPN
Total Devise power dissipation |PD|: 90W
Collector-base breakdown voltage |VCBO|:100V
Collector-emitter breakdown voltage |VCEO|:70V
Emitter-base breakdown voltage |VEBO|: 7V
Maximum collector current |Ic max|: 15A
Maximum junction temperature |Tj|: +150 °C
Transition frequency (ft) : 2,5MHz
Collector-emitter saturation voltage|VCE|:1.1V(IC=4A,IB=400mA)
Forward current transfer ratio |hFE| : 20-70(IC=4 A,VCE=4V)
|
