Marking: TIP41C.
Package: TO- 220AB, 1-base, 2-collector, 3-emitter.
Material of transistor: Si
Polarity: NPN
Total Devise power dissipation |PD|: 65W
Collector-base breakdown voltage |VCBO|:100V
Collector-emitter breakdown voltage |VCEO|:100V
Emitter-base breakdown voltage |VEBO|: 5V
Maximum collector current |Ic max|: 6A
Maximum junction temperature |Tj|: +150 °C
Transition frequency (ft) : 3MHz
Collector-emitter saturation voltage|VCE|:1.5V(IC=6A,IB=600mA)
Forward current transfer ratio |hFE| : 15-75(IC=4 A,VCE=4V)
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