Type Designator:MJE13001, 13001, KSE13001, TS13001, KTS13001, HK13001, ST13001.
Attention! MJE13001 (marking MJE13001)in TO-92, SOT-89 packages and TS13001(marking 13001) in the package TO-92 have different pin assignment.
If the transistor is faulty in such a way that the location of its pins can't be specified by the multimeter
or tester, you need to pay attention to its connection to the electronic circuit of the device in which it is used.
Some 13001 contain built-in diodes connected between the emitter and the collector.
Their purpose is to protect the transistor from reverse voltage pulses that occur when
it operates with an inductive load-usually the transformer winding.
The main parameters of the 13001.
Power Dissipation (PD)at an ambient temperature of 25°, without heat sink.(|TA|=25°)
Power Dissipation (PD)at a collector temperature not exceeding 25° supported by a heat sink.(|Tc|=25°)
Collector-base breakdown voltage |VCBO|: 600V,
Collector-emitter breakdown voltage |VCEO|: 400V
Emitter-base breakdown voltage |VEBO|: 7V,
Maximum collector current |Ic max|: 0.2A for MJE13001,
Maximum junction temperature |Tj|: +150 °C
Transition frequency (ft) : 8MHz(min)
Collector-emitter saturation voltage|VCE|:0,5V(IC=50mA,IB=10mA).
Base-emitter saturation voltage|VBE|:1,2V(IC=50mA,IB=10mA).
Forward current transfer ratio |hFE| : 10-70,(IC=20mA,VCE=20V).
Storage time|t s |:1,5µs
Fall time |t F |:0,3µs